کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1676166 | 1518099 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Substrate temperature dependence of the roughness evolution of HWCVD a-Si:H studied by real-time spectroscopic ellipsometry
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Substrate temperature dependence of the roughness evolution of HWCVD a-Si:H studied by real-time spectroscopic ellipsometry Substrate temperature dependence of the roughness evolution of HWCVD a-Si:H studied by real-time spectroscopic ellipsometry](/preview/png/1676166.png)
چکیده انگلیسی
The surface roughness of HWCVD deposited a-Si:H films has been monitored as a function of the film thickness for substrate temperatures between 70 and 450 °C using real-time spectroscopic ellipsometry. Information on the microstructural evolution of the a-Si:H films has been deduced from the data and different growth phases in this microstructural evolution are discussed in terms of the underlying surface processes such as nucleation and initial growth, surface smoothening and roughening processes, and surface diffusion. From the data, it is concluded that, for the specific conditions studied, the best material properties are obtained at ∼ 250–350 °C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 501, Issues 1–2, 20 April 2006, Pages 88–91
Journal: Thin Solid Films - Volume 501, Issues 1–2, 20 April 2006, Pages 88–91
نویسندگان
W.M.M. Kessels, J.P.M. Hoefnagels, E. Langereis, M.C.M. van de Sanden,