کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1676187 1518099 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of H2 dilution on Cat-CVD a-SiC:H films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Effect of H2 dilution on Cat-CVD a-SiC:H films
چکیده انگلیسی

Effect of hydrogen (H2) dilution of the Silane (SiH4), acetylene (C2H2) gas mixture during the deposition of hydrogenated amorphous silicon carbon alloy (a-SiC:H) films by Cat-CVD process shows that the H2 dilution induced additional carbon incorporation, leading to an increase of the carbon content in the films from 52% to 70% for the maximum H2 dilution employed. A slight increase in graphitic carbon in the films deposited with H2 dilution is also observed. A drastic increase in the optical band gap Eg from 2.5 eV for zero dilution to 3.5 eV is observed for a H2 dilution of 10 sccm. Raman spectra for the films deposited with increasing H2 dilution indicate structural changes in the amorphous network associated with increasing graphitic carbon.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 501, Issues 1–2, 20 April 2006, Pages 173–176
نویسندگان
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