کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1676310 | 1008995 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Controlling gate-CD uniformity by means of a CD prediction model and wafer-temperature distribution control
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Controlling gate-CD uniformity by means of a CD prediction model and wafer-temperature distribution control Controlling gate-CD uniformity by means of a CD prediction model and wafer-temperature distribution control](/preview/png/1676310.png)
چکیده انگلیسی
A technique for predicting wafer temperature was developed, and a model for predicting critical dimension (CD) was devised. Using this technique and model in combination makes it possible to calculate wafer temperature during gate etching within an accuracy of 1 °C and to predict CD distribution after plasma etching. Etching at a temperature for uniform CD given by the CD prediction model reduces the CD variation (3σ) during gate etching from 2.3 to 1.5 nm. Applying this temperature prediction technique and CD prediction model together will contribute to improving etching apparatus design and process development.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 12, 23 April 2007, Pages 4941–4944
Journal: Thin Solid Films - Volume 515, Issue 12, 23 April 2007, Pages 4941–4944
نویسندگان
S. Kanno, G. Miya, J. Tanaka, T. Masuda, K. Kuwahara, M. Sakaguchi, A. Makino, T. Tsubone, T. Fujii,