کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1676325 | 1008995 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Carbon incorporation process in GaAsN films grown by chemical beam epitaxy using MMHy or DMHy as the N source
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Crystal quality of GaAsN films can be improved by using CBE for low-temperature growth. However, low-temperature growth increases C incorporation in the films, which degrades their electrical properties. Consequently, C incorporation was investigated in view of the surface reaction of N sources on a substrate surface, and MMHy and DMHy were compared. When MMHy was used as an N source, C concentration in GaAsN drastically increases below 380 °C than that in GaAs due to insufficient CHx desorption. In the case of DMHy, N(CH3)2 is desorbed more readily than CHx, therefore, the C concentration can then be reduced using DMHy.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 12, 23 April 2007, Pages 5008–5011
Journal: Thin Solid Films - Volume 515, Issue 12, 23 April 2007, Pages 5008–5011
نویسندگان
H. Suzuki, K. Nishimura, H.S. Lee, Y. Ohshita, N. Kojima, M. Yamaguchi,