کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1676325 1008995 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Carbon incorporation process in GaAsN films grown by chemical beam epitaxy using MMHy or DMHy as the N source
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Carbon incorporation process in GaAsN films grown by chemical beam epitaxy using MMHy or DMHy as the N source
چکیده انگلیسی

Crystal quality of GaAsN films can be improved by using CBE for low-temperature growth. However, low-temperature growth increases C incorporation in the films, which degrades their electrical properties. Consequently, C incorporation was investigated in view of the surface reaction of N sources on a substrate surface, and MMHy and DMHy were compared. When MMHy was used as an N source, C concentration in GaAsN drastically increases below 380 °C than that in GaAs due to insufficient CHx desorption. In the case of DMHy, N(CH3)2 is desorbed more readily than CHx, therefore, the C concentration can then be reduced using DMHy.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 12, 23 April 2007, Pages 5008–5011
نویسندگان
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