کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1676328 | 1008995 | 2007 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization and integration of new porous low-k dielectric (k < 2.3) for 65 nm technology and beyond
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Characterization and integration of new porous low-k dielectric (k < 2.3) for 65 nm technology and beyond Characterization and integration of new porous low-k dielectric (k < 2.3) for 65 nm technology and beyond](/preview/png/1676328.png)
چکیده انگلیسی
In this paper, new porous spin-on dielectric (HL02™, trademark of the LG Ltd.) was studied. The characterizations, such as thermal stability, chemical structure, dielectric constant (k) and mechanical properties (hardness and modulus), of methylsilsesquioxane (MSQ)-based dielectrics were evaluated. An optimized material (k = 2.25), characterized by a hardness and a modulus of 1.0 GPa and 6.5 GPa each in association with a porosity of 30% and a mean pore radius of 2.2 nm, was successfully integrated in damascene process with 10 levels of Cu/low-k film for 65 nm technology and beyond. Good electrical results were obtained in metal line resistance and leakage current.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 12, 23 April 2007, Pages 5025–5030
Journal: Thin Solid Films - Volume 515, Issue 12, 23 April 2007, Pages 5025–5030
نویسندگان
Kyeong-Keun Choi, Ihl Hyun Cho, Sang Jong Park, Jung Eun Lim, Oh Jin Jung, Jong Hyuk Park, Byung Seung Min, Sung Bo Hwang, Min Jin Ko, Jeong Gun Lee,