Field-emission characteristics of diamond-like amorphous carbon films deposited by mixed gas (N2 or H2) controlled i-C4H10 supermagnetron plasma

Diamond-like amorphous carbon (DAC) films were deposited for field-emission application using supermagnetron plasma by mixing N2 or H2 in i-C4H10 gas at the upper and lower electrode rf powers (UPRF/LORF) of 800 W/100-800 W. At an 800 W/800 W, the N2 (0-80%) gas-mixed DAC films showed an emission threshold electric field (ETH) of 19 V/μm. At the 800 W/100 W, the H2 (20%) gas-mixed DAC film showed low ETH's of 13 V/μm, respectively. The moderate reduction of CC and CN double bonds by the decrease of LORF from 800 W to 100 W was found to be effective to lower ETH.