Characterization of SnS films prepared by constant-current electro-deposition

SnS films have been prepared on the indium tin oxide coated glass substrates by the constant-current electro-deposition. By investigating the influence of the deposition parameters on the composition of the deposited films, we obtained the optimum deposition parameters with pH = 2.7, Sn2+ / S2O32− = 1 / 5, J = 3.0 mA/cm2 and t = 1.5 h. Many nearly stoichiometric SnS films were prepared. These films were characterized with X-ray diffraction and scanning electron microscopy analysis, and they were polycrystalline with orthorhombic structure. Their direct band gaps were estimated to be 1.21∼1.42 eV from optical measurements. The films have p-type conductivity with a resistivity of 7.5∼20 Ω·cm.