Molecular beam epitaxy of c-plane wurtzite GaN on nitridized a-plane β-Ga2O3

Epitaxial growth of GaN on β-Ga2O3 single crystal substrates by the molecular beam epitaxy technique is demonstrated for the first time. Standard and in-plane X-ray diffraction evidence the growth of c-plane wurtzite GaN on a-plane β-Ga2O3, the epitaxial relationship being 〈0 1 0〉Ga2O3‖ 〈1 1 2¯ 0〉GaN and 〈0 0 1〉Ga2O3‖〈1¯ 1 0 0〉GaN. Epitaxial growth without any buffer layer is achieved after an effective surface nitridation under NH3 gas.