کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1676477 | 1008997 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Area selective epitaxy of indium phosphide on silicon (100) substrates without buffer layers by liquid phase epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Area selective epitaxy of indium phosphide on silicon (100) substrates without buffer layers by liquid phase epitaxy Area selective epitaxy of indium phosphide on silicon (100) substrates without buffer layers by liquid phase epitaxy](/preview/png/1676477.png)
چکیده انگلیسی
Area selective epitaxy (ASE) of InP was performed by liquid phase epitaxy on Si (100) substrates without the use of buffer layers. At the start of epitaxy, the growth temperature was rapidly lowered to obtain high supersaturation. Epitaxial growth was then carried out at constant temperature. While small InP nuclei were observed in the broader open areas, ASE layers and layers showing slight epitaxial lateral overgrowth were formed in the narrow openings. Etch pit density of the InP ASE layers on Si is dependent on the length of open seed region and X-ray diffraction results indicate that the lattice strain in the InP nuclei on the Si substrate was fully relaxed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 11, 9 April 2007, Pages 4838–4842
Journal: Thin Solid Films - Volume 515, Issue 11, 9 April 2007, Pages 4838–4842
نویسندگان
Toshio Kochiya, Yutaka Oyama, Maki Sugai, Jun-ichi Nishizawa,