کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1676864 | 1518093 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural and electrical evaluation for strained Si/SiGe on insulator
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Structural and electrical evaluation for strained Si/SiGe on insulator Structural and electrical evaluation for strained Si/SiGe on insulator](/preview/png/1676864.png)
چکیده انگلیسی
Three strained Si/SiGe on insulator wafers having different Ge fractions were evaluated using dual-metal-oxide-semiconductor (dual-MOS) deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM) methods. The interface of SiGe/buried oxide (BOX) shows roughness less than 1 nm by high resolution TEM observation. The interface states densities (Dit) of SiGe/BOX are approximately 1 × 1012 cm− 2 eV− 1, which is approximately one order of magnitude higher than that of Si/BOX in a Si on insulator wafer measured as reference by the same method of dual-MOS DLTS. The high Dit of SiGe/BOX is not due to interface roughness but due to Ge atoms. The threading dislocations were also clearly observed by TEM and were analyzed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 508, Issues 1–2, 5 June 2006, Pages 107–111
Journal: Thin Solid Films - Volume 508, Issues 1–2, 5 June 2006, Pages 107–111
نویسندگان
Dong Wang, Seiichiro Ii, Ken-ichi Ikeda, Hideharu Nakashima, Masaharu Ninomiya, Masahiko Nakamae, Hiroshi Nakashima,