کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1676870 | 1518093 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Determination of lattice parameters of SiGe/Si(110) heterostructures
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have investigated the crystal structures of SiGe layers grown on Si(110) substrates. A method was developed to analyze Ge composition and strain parameters along [1¯10] and [001] directions, considering anisotropic in-plane strain relaxation process. Samples grown by solid source molecular beam epitaxy (MBE) showed that strain in SiGe layers preferentially relaxed along [1¯10] direction. However, the samples grown by gas source MBE showed formation of domains that had different lattice orientations. Result of the analysis showed that the domains tilted towards [001]/[001¯] directions, by 0.4–0.6°. It was found that the crystal structure strongly depends on growth conditions and sample structures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 508, Issues 1–2, 5 June 2006, Pages 132–135
Journal: Thin Solid Films - Volume 508, Issues 1–2, 5 June 2006, Pages 132–135
نویسندگان
Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki, Shinji Koh, Noritaka Usami,