کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1676945 | 1518094 | 2006 | 6 صفحه PDF | دانلود رایگان |
Plasma polymerized cyclohexane and ethylcyclohexane organic thin films were deposited on Si(100), glass and copper substrates at 25–100 °C by PECVD method. In this study, to compare electrical and electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 20–50 W and deposition temperature on both corrosion protection efficiency and electrical properties were mainly studied. We found that the corrosion protection efficiency (Pk), which is one of the important factors for corrosion protection in the interlayer dielectrics of microelectronic devices application, was increased as a function of RF power. The highest Pk value of the ethylcyclohexane and cyclohexane films grown at 50 W were 92.1% and 85.26%, respectively, indicating that the ethylcyclohexane have better corrosion protection ability due to relative high cross-linking. The impedance analyzer was utilized for the measurement of I–V curve for leakage current density. Determination from the electrical property measurements, the best leakage current density of a cyclohexane thin film was around 5.5 × 10− 12 A/cm2 while that of ethylcyclohexane thin film is about 4.5 × 10− 12 A/cm2.
Journal: Thin Solid Films - Volumes 506–507, 26 May 2006, Pages 2–7