کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1676964 | 1518094 | 2006 | 5 صفحه PDF | دانلود رایگان |
Amorphous carbon (a-C) films were deposited on Si substrates by oxygen plasma-assisted pulsed laser deposition (oxygen PAPLD) technique and were compared with those deposited by PLD in oxygen gas. The film properties were characterized by spectroscopic ellipsometry and X-ray photoelectron spectroscopy. It was shown that the films obtained by the oxygen PAPLD at a substrate temperature, Tsub ∼150 °C, were “diamond-like”, while those by PLD in oxygen gas at Tsub = 550−625 °C were “graphite-like”. This difference could be explained by a high etching rate of sp2 bond in a-C films in oxygen plasma. In the optical emission spectra obtained from carbon ablation plumes near substrate in the oxygen PAPLD, the strong emission bands of CO and CO+ were observed, which could be a proof of the etched molecules by atomic oxygen produced in oxygen plasma.
Journal: Thin Solid Films - Volumes 506–507, 26 May 2006, Pages 96–100