کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1677116 | 1518102 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of thick GaN on the (0001) Al2O3 substrate by hydride-metal organic vapor phase epitaxy
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We report on the crystal quality of thick GaN layers grown on (0001) Al2O3 substrates by newly developed hydride-metal organic vapor phase epitaxy (H-MOVPE) technique. The effects of process parameters on the growth rate were investigated, and the highest growth rate was achieved to be â¼Â 90 μm/h. The X-ray diffraction measurements showed that the layer grown by H-MOVPE on (0001) Al2O3 without any buffer layer has good crystallinity with rocking curve FWHM of the (0002) reflection of about 500 arcsec. Films grown with LT-GaN seed layer of â¼Â 20 nm thickness showed excellent surface morphology with rocking curve FWHM of the (0002) reflection of about 300 arcsec. The photoluminescence spectra of the films showed a strong band edge emission at 3.47 eV with a FWHM of 54 meV at room temperature, indicating the thick GaN layer grown on (0001) Al2O3 with LT-GaN seed layer is of device-grade quality.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 498, Issues 1â2, 1 March 2006, Pages 94-99
Journal: Thin Solid Films - Volume 498, Issues 1â2, 1 March 2006, Pages 94-99
نویسندگان
Chinho Park, Seokki Yeo, Jin-ho Kim, Deoksun Yoon, Timothy J. Anderson,