کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1793858 | 1023685 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
In-situ monitoring of the p- and n-type doping in AlGaInP
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We investigated the effect of Mg p- and Te/Si n-type doping on the in-situ reflectance anisotropy (RAS) spectra for the material system AlGaInP. All results have been compared to ex-situ performed Hall abd SIMS measurements. RAS intensities of Mg-doped AlInP first increase with increasing Mg-flux and then decrease even below the level of the undoped spectra. We explain by the effect, that beyond a critical Mg-flux the excess Mg remains on the surface and causes roughening of the surface and decreasing of the RAS intensities. For the n-type dopants we found a very different impact on the RAS data for Te doping than for Si doping. The RAS intensities from the Si-doped layers show a linear dependence versus the logarithm of the free carrier concentration. The RA spectra of Te-doped samples show a significant change in the shape of the spectra, which is related to surfactant effect of tellurium accumulating on the surface. Besides this a clear dependence of the RA-features to the free carrier concentration was found.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 310, Issue 23, 15 November 2008, Pages 4727-4730
Journal: Journal of Crystal Growth - Volume 310, Issue 23, 15 November 2008, Pages 4727-4730
نویسندگان
C. Krahmer, A. Behres, M. Schubert, K. Streubel,