Temperature effect on the growth of strained GaAs1−ySby/GaAs (y>0.4) quantum wells by MOVPE

In this article, the GaAsSb/GaAs quantum wells (QWs) grown at different temperatures were studied. The growth rate increases and the Sb composition decreases as the growth temperature increases. The photoluminescence properties of GaAsSb/GaAs QWs were measured at room temperature. The samples grown at higher temperature possess lower photoluminescence intensity and larger full-width at half-maximum (FWHM), which means that the Sb segregation effects become more significant at high growth temperature.