کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5466083 | 1517976 | 2017 | 26 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Opto-capacitive study of n-ZnO/p-Si heterojunctions elaborated by reactive sputtering method: Solar cell applications
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Thin films of ZnO were deposited on glass and p-Si substrates by DC reactive sputtering, at different deposition times. The physical properties of the films were investigated by X-ray diffraction, UV-visible transmittance and four-probe measurements. The results show the improvement of the crystallinity, the transparency and the conductivity of films with increasing the thickness. The dark current-voltage, the capacitance-voltage and the spectral response characteristics of n-ZnO/p-Si heterojunctions revealed that the potential barrier profile and the interface state change strongly with the film thickness, which leads to an important difference in the carriers transport phenomena. The good rectifying behaviors were obtained for the thinner ZnO films (16-50Â nm). Under illumination, the hetero-junctions with thinner films show a good photosensitivity in the visible range wavelength (~Â 425Â nm), while, the hetero-junctions with thick ZnO films exhibit a good photosensitivity in the visible and NIR regions (~Â 1100Â nm). The least thick ZnO film (16Â nm) shows a photovoltaic behavior with a short circuit current density (Jsc) of ~Â 1Â mA/cm2 and an open voltage (Voc) of ~Â 0.4Â V.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 636, 31 August 2017, Pages 419-424
Journal: Thin Solid Films - Volume 636, 31 August 2017, Pages 419-424
نویسندگان
L. Chabane, N. Zebbar, M. Trari, M. Kechouane,