کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5466098 | 1517981 | 2017 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Epitaxial corundum-VTiO3 thin films grown on c-cut sapphire
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Epitaxial corundum-VTiO3 thin films grown on c-cut sapphire Epitaxial corundum-VTiO3 thin films grown on c-cut sapphire](/preview/png/5466098.png)
چکیده انگلیسی
Corundum structured VTiO3 has been grown as epitaxial films on c-cut sapphire by laser molecular beam epitaxy. The properties of the film were characterized by reflection high energy electron diffraction, X-ray diffraction, transmission electron microscopy (TEM), and photoemission spectroscopy. All the structural probes clearly indicate the corundum structure of the film. X-ray photoemission spectroscopy (XPS) indicates that V is in a 3Â + charge state implying that Ti also should adopt a 3Â + charge state in order for the corundum structure to form. However, the Ti-2p XPS, while clearly broadened to the lower binding energy side compared to TiO2, also exhibits a pronounced Ti4Â + component. Similarly TEM-electron energy loss spectroscopy indicates a mixture of Ti3Â + and Ti4Â +. This is tentatively assigned to a combination of final state effects in XPS measurements and existence of excess (interstitial) oxygen. The valence band spectra show occupation of 3d metal states that resemble more closely those of Ti2O3 than for V2O3, suggesting that mostly the a1g molecular states are occupied.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 631, 1 June 2017, Pages 85-92
Journal: Thin Solid Films - Volume 631, 1 June 2017, Pages 85-92
نویسندگان
Alan Kramer, Eli Sutter, Dong Su, Matthias Batzill,