کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5466252 | 1517985 | 2017 | 23 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Low-temperature growth of graphene on iron substrate by molecular beam epitaxy
ترجمه فارسی عنوان
رشد دمای پایین گرافن بر روی پایه آهن توسط اپتیکاسیون مولکولی پرتو
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کلمات کلیدی
گرافن، آهن، اپی تیکاسیون تیرهای مولکولی، رشد دمای پایین،
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
چکیده انگلیسی
Graphene has attracted a great deal of interest due to its fascinating properties and a wide variety of potential applications. Several methods have been used to achieve high-quality graphene films on different substrates. However, there have been only a few studies on graphene growth on iron (Fe) and the growth mechanism remains unclear. This paper systematically investigates temperature-dependent growth of graphene on Fe substrate by gas-source molecular beam epitaxy. Two-dimensional (2D), large-area graphene samples were grown on Fe thin films, and characterized by Raman, X-ray photoelectron spectroscopy, X-ray diffraction, optical microscopy, transmission electron microscopy and atomic force microscopy. It is found that graphene flakes can be grown on Fe at a growth temperature as low as 400 °C and the optimized large-area graphene growth temperature is relatively low between 500 °C and 550 °C. The graphene growth on Fe that undergoes the formation and decomposition of iron carbide is discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 627, 1 April 2017, Pages 39-43
Journal: Thin Solid Films - Volume 627, 1 April 2017, Pages 39-43
نویسندگان
Renjing Zheng, Zhongguang Xu, Alireza Khanaki, Hao Tian, Zheng Zuo, Jian-Guo Zheng, Jianlin Liu,