کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5466461 1517992 2016 25 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Ultraviolet photodetectors based on MgZnO thin film grown by RF magnetron sputtering
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Ultraviolet photodetectors based on MgZnO thin film grown by RF magnetron sputtering
چکیده انگلیسی
We demonstrate the growth of high quality, single phase, wurtzite MgxZn1-xO thin films on p-type Si (111) substrate by magnetron sputtering using Mg0·3Zn0.7O as target and no buffer layer is used for the growth. The films are highly oriented along the c-axis and have nanorod-like morphology. The Mg content in MgxZn1-xO films varies in a large range (40.7-51 at. %) by changing the substrate temperature from room temperature to 250 °C. The MgxZn1-xO films maintain the hexagonal phase up to 150 °C substrate temperature and the Mg content at this temperature is 43.7 at.%. The heterostructures of MgxZn1-xO/Si are fabricated into metal-semiconductor-metal photodetectors. The signal to noise ratio (S/N) is as high as 4.3 × 104% at 2 V bias under 325 nm laser at relatively low laser illumination intensity (2.77 mW), and the output photocurrent increases with the increase in the UV illumination intensity at both − 10 V and + 10 V biased voltage. The photocurrents increase with the rise in the illumination intensity. The peak responsivity is 4.6 A/W at 292 nm with a cutoff wavelength of 305 nm and at 9 V bias voltage.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 620, 1 December 2016, Pages 170-174
نویسندگان
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