High mobility thin film transistors based on zinc nitride deposited at room temperature

In this work, the characterization of high mobility thin-film transistors based on zinc nitride films deposited at room temperature by magnetron radio-frequency sputtering is presented. The values extracted of field-effect mobility were > 2 cm2/Vs for long channel devices. For short channel devices, a reduction of the mobility values is found and, as a result of the analysis of the width-normalized resistance for different channel lengths and gate voltages, the reduction is attributed to the effects of a high contact resistance. The impact of the gate dielectric thickness on electrical characteristics is also presented.