کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5466517 | 1517993 | 2016 | 25 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Temperature dependences of current density-voltage and capacitance-frequency characteristics of hydrogenated nanocrystalline cubic SiC/crystalline Si heterojunction diodes
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Temperature dependences of current density-voltage and capacitance-frequency characteristics of hydrogenated nanocrystalline cubic SiC/crystalline Si heterojunction diodes Temperature dependences of current density-voltage and capacitance-frequency characteristics of hydrogenated nanocrystalline cubic SiC/crystalline Si heterojunction diodes](/preview/png/5466517.png)
چکیده انگلیسی
We investigated the temperature dependences of the current density-voltage (J â V) and capacitance-frequency (C â f) characteristics of hydrogenated nanocrystalline cubic SiC/crystalline Si heterojunction diodes. The J â V characteristics showed that over the measured temperature range (100-400 K) the carrier transport was governed by diffusion and recombination. Recombination became dominant with decreasing temperature and tunneling did not contribute to the carrier transport. The C â f characteristics showed two relaxation processes dominant at low and high temperatures. The relaxation process dominant at low temperatures had different relaxation times depending on the heterojunction diode, which was caused by shallow states with different densities. The relaxation process dominant at high temperatures had almost the same relaxation times among diodes, which was caused by deep states (0.25-0.27 eV) with almost the same densities.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 619, 30 November 2016, Pages 323-327
Journal: Thin Solid Films - Volume 619, 30 November 2016, Pages 323-327
نویسندگان
Akimori Tabata,