کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7915528 1511020 2018 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Low-temperature characteristics of normally-off AlGaN/GaN-on-Si gate-recessed MOSHFETs
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Low-temperature characteristics of normally-off AlGaN/GaN-on-Si gate-recessed MOSHFETs
چکیده انگلیسی
We investigated the low-temperature operation of normally-off AlGaN/GaN heterostructure field-effect-transistors (HFETs) with gate-recessed metal-oxidesemiconductor (MOS) structure and normally-on Schottky-gate high-electron-mobility-transistors (HEMTs). Device characteristics measured from 100 to 300 K exhibited the distinct temperature-dependence between two types of devices. While the increase of on-current was observed from normally-on AlGaN/GaN Schottky-gate HEMTs due to the enhanced mobility in the two-dimensional electron gas (2-DEG) channel, normally-off AlGaN/GaN gate-recessed MOSHFETs demonstrated distinctive characteristics at 100 K including the decrease of on-current and the positive shift of threshold voltage (Vth). The temperature-dependence observed in gate-recessed MOSHFETs is attributed to the different characteristics of the recessed channel from the 2-DEG channel, in which the sheet carrier density (nsh) and mobility (μ) were reduced as the temperature approaches the cryogenic regime.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Cryogenics - Volume 93, July 2018, Pages 51-55
نویسندگان
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