کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8032436 | 1517949 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication and properties characterization of BaSi2 thin-films thermally-evaporated on Ge (100) modified substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The fabrication of orthorhombic barium disilicide (BaSi2) thin-films on modified germanium (Ge) substrates by thermal evaporation method was demonstrated, in which the surface modification of Ge substrate was performed by a simple chemical etching method. The effects of etching time on crystalline quality and optical properties of the BaSi2 films were investigated. The results revealed that the substrate modification has positive impact in improving the crystalline quality, reducing the light reflection, and increasing the absorption of the BaSi2 thin-films. Etching time was optimized at 15â¯min, considering the trade-off between crystalline quality and optical properties. Minority carrier-lifetime of the evaporated film on Ge substrate achieved 3.17â¯Î¼s, which is among the high value obtained for thin BaSi2 films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 663, 1 October 2018, Pages 14-20
Journal: Thin Solid Films - Volume 663, 1 October 2018, Pages 14-20
نویسندگان
Mai Thi Kieu Lien, Yoshihiko Nakagawa, Yasuyoshi Kurokawa, Noritaka Usami,