کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8032513 | 1517952 | 2018 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Hole conduction characteristics of cubic Ti1âxAlxN
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Hole conduction characteristics of cubic Ti1âxAlxN Hole conduction characteristics of cubic Ti1âxAlxN](/preview/png/8032513.png)
چکیده انگلیسی
Cubic Ti1âxAlxN (xâ¯=â¯0.5, 0.6) films were deposited using RF (radio frequency) magnetron sputtering and cathodic arc ion plating methods on a thermally oxidized Si substrate to evaluate the temperature dependence of their electrical characteristics by Hall measurements from 10â¯K to 295â¯K. The temperature dependence of the hole concentration and the electrical conductivity above about 200â¯K shows that cubic TiAlN in this study had semiconductor characteristics, indicating that the hole conduction in the valence band is dominant in a high temperature range above about 200â¯K. In contrast, the variable range hopping conduction is dominant in a low temperature range below about 100â¯K. In addition, the hole mobility of Ti0.4Al0.6N deposited by RF sputtering increased with increasing temperature above 220â¯K, even though the phonon scattering increases. This result shows that a disordered grain boundary between polycrystalline TiAlN acts as a barrier layer for the hole conduction.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 660, 30 August 2018, Pages 711-714
Journal: Thin Solid Films - Volume 660, 30 August 2018, Pages 711-714
نویسندگان
Masahiro Yoshikawa, Daiki Toyama, Toshiaki Fujita, Noriaki Nagatomo, Toshiki Makimoto,