کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8032659 | 1517957 | 2018 | 33 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improved leakage current properties of ZrO2/(Ta/Nb)Ox-Al2O3/ZrO2 nanolaminate insulating stacks for dynamic random access memory capacitors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The influence of amorphous high-k interlayers, such as Al2O3, (Ta/Nb)Ox (TN), and (Ta/Nb)Ox-Al2O3 (TNA), on the leakage current (J) and dielectric constant (k) for metal-insulator-metal capacitors with ZrO2/high-k/ZrO2 nanolaminate insulating films and TiN electrodes was investigated. The insulating films were prepared by atomic layer deposition followed by post-deposition annealing at 600â¯Â°C. The capacitance equivalent thickness (CET) of the capacitors increased in the order ZrO2/(Ta/Nb)Ox/ZrO2 (ZTNZ)â¯<â¯ZrO2/(Ta/Nb)Ox-Al2O3/ZrO2 (ZTNAZ)â¯<â¯ZrO2/Al2O3/ZrO2 (ZAZ), owing to the k values for Al2O3 (~6), TNA (~9), and TN (~11). The J values at 0.6â¯V for capacitors with a CET of 1.1â¯nm increased in the order ZTNAZâ¯<â¯ZAZâ¯âªâ¯ZTNZ. The effect of a high-k interlayer on the J characteristics appeared above a thickness of 0.4â¯nm in the case of Al2O3 and TNA, while a 0.8-nm-thick TN maintained high J values. Based on these results, there are three important factors as a high-k interlayer to reduce J value, such as a band gap larger than that for TN (4.4â¯eV), a thickness of â¥0.4â¯nm, and an amorphous structure. Therefore, to achieve the low J and CET, TNA is a promising candidate material for a high-k interlayer for future dynamic random access memory.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 655, 1 June 2018, Pages 48-53
Journal: Thin Solid Films - Volume 655, 1 June 2018, Pages 48-53
نویسندگان
Takashi Onaya, Toshihide Nabatame, Tomomi Sawada, Kazunori Kurishima, Naomi Sawamoto, Akihiko Ohi, Toyohiro Chikyow, Atsushi Ogura,