کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8032936 | 1517963 | 2018 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The influence of an ultrathin Ni interface layer on the performance of GaN-based 380â¯nm UV LED with sputtered Zn1âxMgxO: Al transparent p-type electrode
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In the present work we analyze the Zn1âxMgxO:Al/Ni/p-GaN system as a transparent electrode for GaN-based UV-LEDs. We first study the properties of the Zn1âxMgxO:Al films obtained by DC magnetron sputtering under various conditions and find that they exhibit anomalous crystallization behavior i.e. not all Mg substituted Zn in the ZnO crystal lattice creating Mg precipitates as well as a lack of correlation between the Mg content and film band gap. Subsequently, we study the behavior of the contact with ultrathin Ni films (2.5-10â¯nm) introduced at the interface with p-GaN both after deposition as well after annealing steps at temperatures from 400â¯Â°C to 750â¯Â°C. We use complementary techniques to discuss the structural and chemical properties of the material. We find that the Ni interlayer improved the properties of electrodes, especially their electrical parameters - a 2-3-fold increase in the current at a bias of 2â¯V was observed. Finally, in a full LED structure, we obtained an enhancement of the 380â¯nm irradiated power by 9.5% for the Zn1âxMgxO:Al/2.5â¯nm Ni electrode in comparison with a diode without the Ni interlayer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 649, 1 March 2018, Pages 61-68
Journal: Thin Solid Films - Volume 649, 1 March 2018, Pages 61-68
نویسندگان
M. MasÅyk, M.A. Borysiewicz, K.D. PÄ
gowska, M. Wzorek, M. Ekielski, E. KamiÅska,