کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8033024 | 1517965 | 2018 | 22 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High pressure Raman scattering of a co-evaporated Cu2SnSe3 thin film
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We fabricated Cu2SnSe3 thin film on a Mo-coated soda-lime glass substrate by a co-evaporation method. The X-ray diffraction pattern revealed the formation of polycrystalline Cu2SnSe3 with a monoclinic structure (space group Cc). Raman scattering measurements were also performed on the thin film at a pressure ranging from 1 atm to 7.01 GPa. The Raman spectrum was resolved into 4 Lorentzian peaks observed at 184 cmâ 1, 206 cmâ 1, 236 cmâ 1, and 252 cmâ 1 at 1 atm, which correspond to Aâ², Aâ³, Aâ³, and Aâ² symmetry, respectively. The effects of pressure on these Raman-active phonon modes were discussed. The measured elastic properties of Cu2SnSe3 under high pressure were also compared with those of Cu2ZnSnSe4.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 647, 1 February 2018, Pages 9-12
Journal: Thin Solid Films - Volume 647, 1 February 2018, Pages 9-12
نویسندگان
Yongshin Kim, In-Hwan Choi,