کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8033260 | 1517968 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Endurance improvement and resistance stabilization of transparent multilayer resistance switching devices with oxygen deficient WOx layer and heat dissipating AlN buffer layer
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Endurance improvement and resistance stabilization of transparent multilayer resistance switching devices with oxygen deficient WOx layer and heat dissipating AlN buffer layer Endurance improvement and resistance stabilization of transparent multilayer resistance switching devices with oxygen deficient WOx layer and heat dissipating AlN buffer layer](/preview/png/8033260.png)
چکیده انگلیسی
In this study, indium tin oxide (ITO), zinc oxide (ZnO), tungsten oxide (WOx), and aluminum nitride (AlN) were employed to fabricate and investigate four transparent resistive random access memory (ReRAMs) structures: ITO/ZnO/ITO (structure 1), ITO/WO3/ZnO/ITO (structure 2), ITO/WOx(x < 3)/WO3/ZnO/ITO (structure 3), and ITO/WOx(x < 3)/WO3/ZnO/AlN/ITO (structure 4). Structure 4 exhibited less variation in low-resistance states, lower operating voltages, and higher endurance compared with other structures. This phenomenon was attributed to the oxygen-deficient WOx layer in structure 4, which acted as an oxygen ion reservoir for efficient resistive changes, and the WO3 layer limited the filament rupture and formation region. Moreover, the high thermal conductivity of the AlN layer alleviated the thermally activated ion movement of the ReRAM and strengthened the high-resistance state. Structure 4 was found to be the optimal structure, with median operating voltages 1.6 V for SET operations and â 1.0 V for RESET operations, retention of > 104 s at 200 °C, and endurance of 104 cycles with a resistance ratio of over 20. Structure 4 exhibited extremely high stability in both low- and high-resistance states during cycling. The transmittance of structure 4 was 85.49%, which is suitable for optoelectronic applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 644, 31 December 2017, Pages 10-15
Journal: Thin Solid Films - Volume 644, 31 December 2017, Pages 10-15
نویسندگان
Yu-Hsuan Lin, Ding-Chiuan Huang, Jen-Chung Lou, Tseung-Yuen Tseng,