Evaluation of mesoporous silicon substrates strain for the integration of radio frequency circuits

In this work, the strain of 6 inches PS substrates which has been generated during electrochemical etching and post anodization annealing steps are studied. It is shown that, if the anodization process is not well-controlled, the consequences can be cracks of the PS layer or a high wafer curvature which prevents device from integration with a standard process. It is also demonstrated that different kinds of defects due to PS stress can be also observed on full wafer PS layers and localized PS substrates as well.