کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8034121 | 1518022 | 2015 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Microstructure characterization of the soda-lime-glass/copper-indium-gallium-selenium interface in Cu-poor Cu(In,Ga)Se2 thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Microstructure characterization of the soda-lime-glass/copper-indium-gallium-selenium interface in Cu-poor Cu(In,Ga)Se2 thin films Microstructure characterization of the soda-lime-glass/copper-indium-gallium-selenium interface in Cu-poor Cu(In,Ga)Se2 thin films](/preview/png/8034121.png)
چکیده انگلیسی
The microstructure characteristics of the soda-lime-glass/Cu(In,Ga)Se2 (SLG/CIGS) interface in Cu-poor CIGS films are investigated by transmission electron microscopy and selected area electronic diffraction (SAED). The SAED patterns show very sharp and strong spots, indicating the main structure of CIGS chalcopyrite. Small dispersed crystals with size distribution from 2 to 5 nm seem to be embedded in amorphous matrix, and additional spots indicate the presence of an ordered vacancy compound (OVC). This observation is consistent with the Raman results, and the OVC phase with the nanoclusters exists in the CIGS matrix, instead of layer structure. Lattice distortion results in local changes in contrast. Some pseudo-disordered structure is observed, however, the structure is actually the chalcopyrite CIGS structure. 180° rotation twins are also observed at the SLG/CIGS interface. Lattice distortion is widely observed at the interface of the Cu-poor CIGS films, and the extra spots could be caused by different lattice orientations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 583, 29 May 2015, Pages 50-54
Journal: Thin Solid Films - Volume 583, 29 May 2015, Pages 50-54
نویسندگان
Jian Wang, Yi Qiao, Jie Zhu,