کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8034540 | 1518026 | 2015 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thin-film crystal growth of microcrystalline silicon using very-high-frequency hollow-electrode-enhanced glow plasma
ترجمه فارسی عنوان
رشد کریستال نازک سیلیکون میکرو کریستالی با استفاده از پلاسمای تابشی بسیار بالا از طریق الکترودهای توخالی
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
چکیده انگلیسی
The thin-film crystal growth of hydrogenated microcrystalline silicon (μc-Si:H) on SiO2 was investigated by using a very-high-frequency hollow-electrode-enhanced glow plasma system with an ultrahigh-vacuum reactor. The properties of the μc-Si:H thin films deposited with different flow rates of both mono-silane and hydrogen were characterized. We achieved fabrication of a μc-Si:H thin film with a growth rate of 4.0 nm/s, good photosensitivity, high crystallinity, and highly preferred crystal orientation along the < 110 > direction at a gas pressure of 80 Pa. To study the crystallographic structure in detail, cross-sectional transmission electron microscopy (TEM), limited-visual-field electron beam diffraction imaging, and high-resolution TEM were applied for the thin films deposited with the highest (4.0 nm/s) and lowest (0.25 nm/s) growth rates, respectively. The crystallographic images clearly show columnar growth of microcrystalline silicon in every region of the films, with a very thin transition layer less than 2 nm thick, suggesting direct growth from the substrate surface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 579, 31 March 2015, Pages 68-74
Journal: Thin Solid Films - Volume 579, 31 March 2015, Pages 68-74
نویسندگان
Toshihiro Tabuchi, Yasumasa Toyoshima, Masayuki Takashiri,