کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8034971 | 1518040 | 2014 | 32 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Remote hydrogen microwave plasma chemical vapor deposition from methylsilane precursors. 1. Growth mechanism and chemical structure of deposited a-SiC:H films
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Amorphous hydrogenated silicon carbide (a-SiC:H) thin films were produced by remote microwave hydrogen plasma chemical vapor deposition (RP-CVD) using dimethylsilane (DMS) and trimethylsilane (TrMS) as single-source precursors. The effect of substrate temperature on the rate of RP-CVD process, chemical composition and chemical structure of resulting a-SiC:H films is reported. The Arrhenius plots of substrate temperature dependencies of the thickness-based film growth rate imply that the investigated RP-CVD for DMS precursor is a non-thermally activated process, whereas for TrMS precursor is an adsorption-controlled process. The examination of the a-SiC:H films performed by means of Auger electron spectroscopy, X-ray photoelectron spectroscopy, and Fourier transform infrared absorption spectroscopy, revealed that the increase in the substrate temperature from 30 °C to 400 °C causes the elimination of organic moieties from the films and the formation of Si-carbidic network structures. On the basis of the results of structural study the elementary reactions involved in the formation of a-SiC:H films are proposed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 564, 1 August 2014, Pages 222-231
Journal: Thin Solid Films - Volume 564, 1 August 2014, Pages 222-231
نویسندگان
A.M. Wrobel, A. Walkiewicz-Pietrzykowska, P. Uznanski,