کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8035205 | 1518047 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Tunnel field-effect transistors with germanium/strained-silicon hetero-junctions for low power applications
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have studied a simple structure n-channel tunnel field-effect transistor with a pure-Ge/strained-Si hetero-junction. The device operation was demonstrated for the devices fabricated by combining epitaxially-grown Ge on strained-silicon-on-insulator substrates. Atomic-layer-deposition-Al2O3-based gate stacks were formed with electron cyclotron resonance plasma post oxidation to ensure the high quality metal-oxide-semiconductor interface between the high-k insulator and Ge. While the gate leakage current and drain current saturation are well controlled, relatively higher minimum subthreshold swing of 125Â mV/dec and lower ION/IOFF ratio of 103-104 were obtained. It is expected that these device characteristics can be improved by further process optimization.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 557, 30 April 2014, Pages 298-301
Journal: Thin Solid Films - Volume 557, 30 April 2014, Pages 298-301
نویسندگان
Minsoo Kim, Younghyun Kim, Masafumi Yokoyama, Ryosho Nakane, SangHyeon Kim, Mitsuru Takenaka, Shinichi Takagi,