کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8035234 | 1518048 | 2014 | 17 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Femtosecond laser induced crystallization of hydrogenated amorphous silicon for photovoltaic applications
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Femtosecond laser assisted crystallization is used to produce nanocrystalline silicon from hydrogenated amorphous silicon. Changes in structural, optical, electrical and photoelectric properties of laser modified amorphous silicon were investigated. Laser treated films were characterized using atomic force microscopy, Raman spectroscopy, constant photocurrent method and current measurements. Crystalline volume fraction as well as conductivity of laser irradiated films increased with the applied laser fluence, while hydrogen concentration in the films was found to decrease with the fluence. Spectral dependences of absorption coefficient, measured by constant photocurrent method, are discussed in terms of hydrogen out-effusion and additional defect state formation in silicon films during the laser treatment.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 556, 1 April 2014, Pages 410-413
Journal: Thin Solid Films - Volume 556, 1 April 2014, Pages 410-413
نویسندگان
Andrey V. Emelyanov, Mark V. Khenkin, Andrey G. Kazanskii, Pavel A. Forsh, Pavel K. Kashkarov, Mindaugas Gecevicius, Martynas Beresna, Peter G. Kazansky,