کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8035258 | 1518048 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Memory resistive switching in CeO2-based film microstructures patterned by a focused ion beam
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
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چکیده انگلیسی
Heteroepitaxial CeO2 (80Â nm)/La0.5Sr0.5CoO3 (500Â nm) film structure has been pulsed laser deposited on a sapphire substrate. The Ag/CeO2 microjunctions patterned by a focused ion beam on a La0.5Sr0.5CoO3 film exhibit reproducible reversible switching between a high resistance state (OFF) with insulating properties and a semiconducting or metallic low resistance state (ON) with resistance ratios up to 104. The influence of micro-scaling and defects formed at the cell boundaries during etching on its electrical characteristics has been analyzed. The appearance of a switching channel at the moment of the electrical forming, responsible for the memory effect, has been proved, along with a mechanism of a self-healing electrical breakdown.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 556, 1 April 2014, Pages 520-524
Journal: Thin Solid Films - Volume 556, 1 April 2014, Pages 520-524
نویسندگان
A. Velichko, P. Boriskov, A. Savenko, A. Grishin, S. Khartsev, M. Ahmed Yar, M. Muhammed,