کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8035258 1518048 2014 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Memory resistive switching in CeO2-based film microstructures patterned by a focused ion beam
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Memory resistive switching in CeO2-based film microstructures patterned by a focused ion beam
چکیده انگلیسی
Heteroepitaxial CeO2 (80 nm)/La0.5Sr0.5CoO3 (500 nm) film structure has been pulsed laser deposited on a sapphire substrate. The Ag/CeO2 microjunctions patterned by a focused ion beam on a La0.5Sr0.5CoO3 film exhibit reproducible reversible switching between a high resistance state (OFF) with insulating properties and a semiconducting or metallic low resistance state (ON) with resistance ratios up to 104. The influence of micro-scaling and defects formed at the cell boundaries during etching on its electrical characteristics has been analyzed. The appearance of a switching channel at the moment of the electrical forming, responsible for the memory effect, has been proved, along with a mechanism of a self-healing electrical breakdown.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 556, 1 April 2014, Pages 520-524
نویسندگان
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