کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8035321 | 1518054 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Deposition and x-ray characterization of epitaxial thin films of LaAlO3
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Deposition and x-ray characterization of epitaxial thin films of LaAlO3 Deposition and x-ray characterization of epitaxial thin films of LaAlO3](/preview/png/8035321.png)
چکیده انگلیسی
Highly epitaxial thin films of lanthanum aluminate (LaAlO3) have been obtained on strontium titanate (SrTiO3) substrates by means of atomic layer deposition using La(thd)3 (Hthd = 2,2,6,6-tetramethylhepta-3,5-dione), Al(CH3)3 and ozone as precursors. The system shows a near linear relationship between pulsed and deposited composition. Thin films with stoichiometric composition have been subject to thermal annealing at 650 °C under oxygen atmosphere, thereby achieving epitaxial films on Ti-O-terminated substrates of SrTiO3. The thin film||substrate epitaxial relationship is determined to be LaAlO3(100)|LaAlO3[100]||-SrTiO3(100)|SrTiO3[100] by use of synchrotron radiation. Selected films were also deposited on LaAlO3(100) to achieve homoepitaxy. This resulted in the observation of split peaks for high q-reflections, pointing towards slight differences in stoichiometry. For ultrathin films, Bragg satellites were observed around the specular reflections, coming from either surface- or interface reconstruction.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 550, 1 January 2014, Pages 90-94
Journal: Thin Solid Films - Volume 550, 1 January 2014, Pages 90-94
نویسندگان
Henrik Hovde Sønsteby, Erik Ãstreng, Helmer FjellvÃ¥g, Ola Nilsen,