کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8035841 1518058 2013 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Growth of GaN layer with preserved nano-columnar low temperature GaN buffer to reduce the wafer bowing
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Growth of GaN layer with preserved nano-columnar low temperature GaN buffer to reduce the wafer bowing
چکیده انگلیسی
In this study, a nano-columnar low-temperature (LT) GaN buffer was used to reduce the wafer bowing of a GaN layer grown on a sapphire substrate. A significant reduction in the extent of wafer bowing was observed for the GaN layer for the preserved nano-columnar LT GaN layer when compared with the conventional GaN layer. These results suggest that the preserved nano-columnar structure helped relax the GaN layer strain energy associated with thermal expansion mismatch. The flow of TMGa during the temperature ramp-up from LT to high-temperature was found to be an important process parameter to preserving the nano-columnar structure of LT GaN, resulting in less bowed GaN on sapphire.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 546, 1 November 2013, Pages 118-123
نویسندگان
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