کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8036149 | 1518058 | 2013 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optical and electrical properties of transparent conducting gallium-doped ZnO electrodes prepared by atomic layer deposition for application in organic solar cells
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
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چکیده انگلیسی
Transparent and conducting gallium-doped ZnO electrodes were fabricated by means of atomic layer deposition. The electrode showed the lowest resistivity of 7.19 Ã 10â 4 Ω cm at a 5% cyclic layer deposition ratio of Trimethyl-gallium and Diethyl-zinc chemicals. The electrodes showed minimum resistivity when deposited at a temperature of 250 °C. The electrode also showed optical transmittance of about 82%-89% with film thicknesses between 100 nm and 300 nm. An organic solar cell made with a 300-nm-thick gallium-doped ZnO electrode exhibited 2.5% power conversion efficiency, and an efficiency equivalent to that of cells made with conventional indium tin oxide electrodes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 546, 1 November 2013, Pages 271-274
Journal: Thin Solid Films - Volume 546, 1 November 2013, Pages 271-274
نویسندگان
Yoon Seog Song, Nak Jin Seong, Kyu Jeong Choi, Sang Ouk Ryu,