Mechanical properties and structure of TiO2 films deposited on quartz and silicon substrates

Phase analysis and hardness data imply that RF induced self-bias on the upper surface of quartz substrate is smaller in comparison to that on the surface of the semiconductive and especially conductive Si substrate. The rutile phase still grows after the RF power is switched off. The rutile grain size increases while hardness decreases in this case. Micro-Raman spectroscopy of residual indents in the films with anatase structure points out on the more dense high pressure TiO2-II structure formed during the indentation.