Characterization of nanostructured As2S3 thin films synthesized at room temperature by chemical bath deposition method using various complexing agents

Nanostructured binary As2S3 thin films were deposited onto glass substrates by chemical bath deposition method from complexed and uncomplexed baths using complexing agents acetic acid, ethylenediaminetetraacetic acid, oxalic acid and tartaric acid. The effect of complexing agent on structural, electrical, morphological and optical properties of As2S3 is reported. The synthesized films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), electrical resistivity and optical absorption measurements. The deposited films are nanocrystalline in nature with monoclinic lattice. The films deposited from uncomplexed bath and from ethylenediaminetetraacetic acid complexes are non-porous and become porous for other complexes. The electrical resistivity and optical band gap is also found complex dependent.