کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8036482 | 1518062 | 2013 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improvement of charge trapping characteristics of Al2O3/Al-rich Al2O3/SiO2 stacked films by thermal annealing
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Thin film Al2O3/Al-rich Al2O3/SiO2 structures were fabricated on p-Si substrates. Radio-frequency magnetron co-sputtering was used to form Al-rich Al2O3 thin film as the charge-trapping layer of nonvolatile Al2O3 memory. Capacitance-voltage measurements showed a large hysteresis due to charge trapping in the Al-rich Al2O3 layer. The charge trap density was estimated to be 42.7 Ã 1018 cmâ 3, which is the largest value ever reported for an Al-rich Al2O3 layer; it is six times larger than that of a conventional metal-nitride-oxide-silicon memory. Thermal annealing was found to reduce the leakage current of the Al2O3 blocking layer, thereby providing this structure with better data retention at room temperature than an as-deposited one. In addition, the annealed structure was found to exhibit good data retention even at 100 °C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 542, 2 September 2013, Pages 242-245
Journal: Thin Solid Films - Volume 542, 2 September 2013, Pages 242-245
نویسندگان
Shunji Nakata, Takashi Kato, Shinya Ozaki, Takeshi Kawae, Akiharu Morimoto,