کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8036678 | 1518067 | 2013 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Atmospheric pressure chemical vapour deposition of vanadium arsenide thin films via the reaction of VCl4 or VOCl3 with tBuAsH2
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Atmospheric pressure chemical vapour deposition of vanadium arsenide thin films via the reaction of VCl4 or VOCl3 with tBuAsH2 Atmospheric pressure chemical vapour deposition of vanadium arsenide thin films via the reaction of VCl4 or VOCl3 with tBuAsH2](/preview/png/8036678.png)
چکیده انگلیسی
Thin films of vanadium arsenide were deposited via the dual-source atmospheric pressure chemical vapour deposition reactions of VCl4 or VOCl3 with tBuAsH2. Using the vanadium precursor VCl4, films were deposited at substrate temperatures of 550-600 °C, which were black-gold in appearance and were found to be metal-rich with high levels of chlorine incorporation. The use of VOCl3 as the vanadium source resulted in films being deposited between 450 and 600 °C and, unlike when using VCl4, were silver in appearance. The films deposited using VOCl3 demonstrated vanadium to arsenic ratios close to 1:1, and negligible chlorine incorporation. Films deposited using either vanadium precursor were identified as VAs using powder X-ray diffraction and possessed borderline metallic/semiconductor resistivities.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 537, 30 June 2013, Pages 171-175
Journal: Thin Solid Films - Volume 537, 30 June 2013, Pages 171-175
نویسندگان
Tegan Thomas, Christopher S. Blackman, Ivan P. Parkin, Claire J. Carmalt,