کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8036905 | 1518068 | 2013 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
ZrO2 flexible printed resistive (memristive) switch through electrohydrodynamic printing process
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
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چکیده انگلیسی
Electrohydrodynamic (EHD) printing technique has been deployed to fabricate flexible printed resistive (memristive) switch in a metal-insulator-metal sandwich structure of Ag/ZrO2/Ag on a polyimide substrate under normal room conditions. The top and bottom electrodes were deposited through the jetting of EHD printing and the active layer of ZrO2 between two electrodes was deposited through the atomization of EHD printing process. The achieved dimensions of the printed device were around 100 μm Ã 100 μm with the thickness of the bottom electrode, switching layer and top electrode were around 230 nm, 680 nm and 420 nm respectively. The fabricated device showed stable bipolar memristive switching behavior around ± 3 V. The reversible resistive switching behavior was measured with the high OFF/ON ratio of 100:1. The device kept on exhibiting memristive characteristics after being physically flexed over 500 times that shows its viability for flexible electronics applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 536, 1 June 2013, Pages 308-312
Journal: Thin Solid Films - Volume 536, 1 June 2013, Pages 308-312
نویسندگان
Muhammad Naeem Awais, Hyung Chan Kim, Yang Hui Doh, Kyung Hyun Choi,