Synthesis and phase evolution in Nb/Si multilayers obtained by sequential laser ablation

► Reports the synthesis of Nb/Si multilayers (48/27 nm) by laser ablation. ► Reports amorphous Si layer that contains ~ 27 at.% Nb. ► Phase evaluation at 600 °C indicate formation of hexagonal Nb5Si3 phase. ► Phase evolution is different from that reported for sputter deposition.