Thin film LaYbO3 capacitive structures grown by pulsed laser deposition

► The LaYbO3 (002)o planes are aligned with the (001)c planes of the substrate. ► Capacitive behavior was found for LaYbO3 grown in oxygen at a pressure of 0.40 Pa. ► The relative permittivity of the LaYbO3 film is in the range of 31-36.