کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812095 | 1518106 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication of high performance pentacene thin film transistors using poly(4-vinylphenol) as the gate insulator on polyethyleneterephthalate substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Fabrication of high performance pentacene thin film transistors using poly(4-vinylphenol) as the gate insulator on polyethyleneterephthalate substrates Fabrication of high performance pentacene thin film transistors using poly(4-vinylphenol) as the gate insulator on polyethyleneterephthalate substrates](/preview/png/9812095.png)
چکیده انگلیسی
Pentacene thin film transistors (TFTs) were fabricated by using poly(4-vinylphenol) as the gate insulator and pentacene as the organic semiconductor on polyethyleneterephthalate substrates. The TFTs were characterized and the following parameters were obtained: a mobility of 0.8 cm2/V s ± 0.2 cm2/V s, an on / off current ratio of 106 and a subthreshold slope of 1.0 V/dec. Inverter circuits based on the organic TFTs exhibited transfer curves typical of inverters with gains of 9.7 and a little hysteresis, which is indicative of a small number of interface states.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 493, Issues 1â2, 22 December 2005, Pages 278-281
Journal: Thin Solid Films - Volume 493, Issues 1â2, 22 December 2005, Pages 278-281
نویسندگان
Hyun Sook Byun, Yong-Xian Xu, Chung Kun Song,