کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812168 | 1518108 | 2005 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Beryllium-doped polycrystalline GaN films: Optical and grain boundary properties
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Be-doped polycrystalline GaN films were deposited by radio frequency sputtering of a GaN/Be composite target onto fused silica substrates. The films were characterized by optical measurements, while the microstructural information was obtained from scanning electron microscopy, atomic force microscopy and X-ray diffraction studies. Grain boundary parameters like density of trap states (Qt) and the barrier height (Eb) at the grain boundaries were estimated from the broadening of the absorption tail. Photoluminescence measurement at 80 K exhibited two strong transitions located â¼Â 2.1 eV and â¼Â 2.7 eV along with lower intensity peaks for band edge luminescence at â¼Â 3.47 eV and 3.28 eV for films deposited at T = 423 K and 623 K, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 491, Issues 1â2, 22 November 2005, Pages 29-37
Journal: Thin Solid Films - Volume 491, Issues 1â2, 22 November 2005, Pages 29-37
نویسندگان
M. Pal Chowdhury, R.K. Roy, B.R. Chakraborty, A.K. Pal,