کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9812168 1518108 2005 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Beryllium-doped polycrystalline GaN films: Optical and grain boundary properties
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Beryllium-doped polycrystalline GaN films: Optical and grain boundary properties
چکیده انگلیسی
Be-doped polycrystalline GaN films were deposited by radio frequency sputtering of a GaN/Be composite target onto fused silica substrates. The films were characterized by optical measurements, while the microstructural information was obtained from scanning electron microscopy, atomic force microscopy and X-ray diffraction studies. Grain boundary parameters like density of trap states (Qt) and the barrier height (Eb) at the grain boundaries were estimated from the broadening of the absorption tail. Photoluminescence measurement at 80 K exhibited two strong transitions located ∼ 2.1 eV and ∼ 2.7 eV along with lower intensity peaks for band edge luminescence at ∼ 3.47 eV and 3.28 eV for films deposited at T = 423 K and 623 K, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 491, Issues 1–2, 22 November 2005, Pages 29-37
نویسندگان
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