کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812260 | 1518110 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electron energy loss spectroscopy, low energy electron diffraction, and auger electron spectroscopy study of Indium overlayers on Si(111) and Si(100) surfaces
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electron energy loss spectroscopy, low energy electron diffraction, and auger electron spectroscopy study of Indium overlayers on Si(111) and Si(100) surfaces Electron energy loss spectroscopy, low energy electron diffraction, and auger electron spectroscopy study of Indium overlayers on Si(111) and Si(100) surfaces](/preview/png/9812260.png)
چکیده انگلیسی
In this paper, the behaviors of Indium overlayers on Si(111)7 Ã 7 and Si(100)2 Ã 1 surfaces have been investigated by low energy electron diffraction, electron energy loss spectroscopy, and auger electron spectroscopy. The behaviors of Indium overlayers on Si(111) and Si(100) surfaces are different. At room temperature, an intermixed interfacial phase was formed during Indium adsorption on Si(111) surface, but Indium was not intermixed with Si substrate on Si(100) surface. At the temperature of â¼550 °C and In coverage > 0.5 monolayer, the Si(100) surface could be completely faceted to {310} facets by Indium.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 489, Issues 1â2, 1 October 2005, Pages 111-115
Journal: Thin Solid Films - Volume 489, Issues 1â2, 1 October 2005, Pages 111-115
نویسندگان
Manhui Sun, Chuan Hu, R.G. Zhao, Hang Ji,