کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812267 | 1518110 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Lateral growth and three-dimensional effects in contacts between NiSi0.82Ge0.18 and p+-Si0.82Ge0.18
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Lateral growth and three-dimensional effects in contacts between NiSi0.82Ge0.18 and p+-Si0.82Ge0.18 Lateral growth and three-dimensional effects in contacts between NiSi0.82Ge0.18 and p+-Si0.82Ge0.18](/preview/png/9812267.png)
چکیده انگلیسی
Electrical contacts of NiSi0.82Ge0.18 to p+-Si0.82Ge0.18 were fabricated and characterised. Lateral growth of the NiSi0.82Ge0.18 under SiO2 isolation was observed. A three-dimensional model was employed to extract the contact resistivity by considering both the lateral growth and the presence of a recessed NiSi0.82Ge0.18 step into the Si0.82Ge0.18. The contact resistivity extracted was 5.0 Ã 10â 8 and 1.4 Ã 10â 7 Ω cm2 for small contacts of circular geometry and large contacts of square shape, respectively. Possible causes responsible for this 3-fold difference in contact resistivity were discussed. An underestimate of the contact resistivity by 35% was found if a two-dimensional model was used without taking into account the complex interface morphology.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 489, Issues 1â2, 1 October 2005, Pages 159-163
Journal: Thin Solid Films - Volume 489, Issues 1â2, 1 October 2005, Pages 159-163
نویسندگان
S. Persson, C. Isheden, T. Jarmar, S.-L. Zhang,